LaAlO3
LaAlO3 crystal is the substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetoresistance thin films because of its good lattice matching with a variety of perovskite structure materials.
File Download- Product Description
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LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.
Main Advantages:
Small dielectric constant
Low dielectric loss
Good lattice matching
Small thermal expansion coefficient
Good chemical stability; wide energy gap
Large specific surface area
Good thermal stability
Typical applications:
High temperature superconducting thin film epitaxial substrate; Macro-magnetic thin film epitaxial substrate; Microwave amplification and dielectric resonance
- Material Properties
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Chemical Formula
LaAlO3
Growth Method
Czochralski
Crystal System
Hexagonal (room temperature)
Lattice Constant
Hexagonal a = 5.357Å c = 13.22 Å
Hardness
6.5 Mohs
Density
6.52g/cm3
Melting Point
2080℃
Thermal Expansion
10×10-6/℃
Loss Tangent (10ghz)
～3×10-4@300K,～0.6×10-4@77K
- Technical Parameter
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Crystro offers:
Dimensions
Max Diameter 76.2mm（3 inch）
Thickness
0.5mm other thickness available
Polishing
Single or double
Orientation
<100><110><111>
Ra
Ra≤5Å（5µm×5µm）
Orientation Tolerance
±0.2°
Orientation Flat
2°（within 1° for special requirement）
Angle of Crystalline
Special size and orientation are available upon request
Note: Above parameters for reference only, please contact our sales Rep. for your specific requirement.